Microstructure of Splat-Solidified CuInSe<SUB>2</SUB>

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  • Ikezawa Kazuhiro
    Laboratory of Advanced Materials, Department of Materials Engineering, Faculty of Engineering, Hokkaido University
  • Ohnuki Somei
    Laboratory of Advanced Materials, Department of Materials Engineering, Faculty of Engineering, Hokkaido University
  • Nagai Hideaki
    Materials Division, Hokkaido National Industrial Research Institute
  • Nakata Yoshinori
    Materials Division, Hokkaido National Industrial Research Institute
  • Suzuki Masaaki
    Materials Division, Hokkaido National Industrial Research Institute
  • Okutani Takeshi
    Materials Division, Hokkaido National Industrial Research Institute

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  • Microstructure of Splat-Solidified CuInSe2

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The splat solidification method was applied for making thin platelets of a future solar cell material, CuInSe2. The microstructure and second phase formation strongly depended on the cooling rate which was decided by the argon gas pressure and specimen thickness. The predominant surface structure was a function of the cooling rate; coarse dendritic and fine equiaxed structures for low and high cooling rate, respectively. The cross-sectional observation indicated that the matrix was chalcopyrite CuInSe2, but the second phases of InSe and Cu–In compounds were located on the grain boundary. With increasing cooling rate, only the InSe phase was prevented from growth. In this experiment, an appropriate solidification condition was the specimen thickness of 100 μm and the gas pressure of 1.5×105 Pa, which enabled the increase in flat surface area and the minimization of second phase precipitation.

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