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- Ikezawa Kazuhiro
- Laboratory of Advanced Materials, Department of Materials Engineering, Faculty of Engineering, Hokkaido University
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- Ohnuki Somei
- Laboratory of Advanced Materials, Department of Materials Engineering, Faculty of Engineering, Hokkaido University
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- Nagai Hideaki
- Materials Division, Hokkaido National Industrial Research Institute
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- Nakata Yoshinori
- Materials Division, Hokkaido National Industrial Research Institute
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- Suzuki Masaaki
- Materials Division, Hokkaido National Industrial Research Institute
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- Okutani Takeshi
- Materials Division, Hokkaido National Industrial Research Institute
書誌事項
- タイトル別名
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- Microstructure of Splat-Solidified CuInSe<SUB>2</SUB>
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抄録
The splat solidification method was applied for making thin platelets of a future solar cell material, CuInSe2. The microstructure and second phase formation strongly depended on the cooling rate which was decided by the argon gas pressure and specimen thickness. The predominant surface structure was a function of the cooling rate; coarse dendritic and fine equiaxed structures for low and high cooling rate, respectively. The cross-sectional observation indicated that the matrix was chalcopyrite CuInSe2, but the second phases of InSe and Cu–In compounds were located on the grain boundary. With increasing cooling rate, only the InSe phase was prevented from growth. In this experiment, an appropriate solidification condition was the specimen thickness of 100 μm and the gas pressure of 1.5×105 Pa, which enabled the increase in flat surface area and the minimization of second phase precipitation.
収録刊行物
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- Materials Transactions, JIM
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Materials Transactions, JIM 40 (7), 659-664, 1999
社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679222181120
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- NII論文ID
- 10005356051
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- NII書誌ID
- AA10699969
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- COI
- 1:CAS:528:DyaK1MXmtlWqsbc%3D
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- ISSN
- 2432471X
- 09161821
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- NDL書誌ID
- 4811864
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可