Effect of Si/C Ratio on Thermoelectric Properties of β-FeSi<SUB>2</SUB> Mechanically Alloyed with (Si+C) Additions
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- Nagai Hiroshi
- Department of Materials Science and Processing, Graduate School of Osaka University
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- Katsura Takayuki
- Department of Materials Science and Processing, Graduate School of Osaka University
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- Ito Mikio
- Department of Materials Science and Processing, Graduate School of Osaka University
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- Katsuyama Shigeru
- Department of Materials Science and Processing, Graduate School of Osaka University
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- Majima Kazuhiko
- Department of Materials Science and Processing, Graduate School of Osaka University
Bibliographic Information
- Other Title
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- Effect of Si/C Ratio on Thermoelectric Properties of β-FeSi2 Mechanically Alloyed with(Si+C)Additions
- Effect of Si C Ratio on Thermoelectric Properties of ベータ FeSi2 Mechanically Alloyed with Si C Additions
- Effect of Si/C Ratio on Thermoelectric Properties of β-FeSi<SUB>2</SUB> Mechanically Alloyed with (Si+C) Additions
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Abstract
In order to improve the thermoelectric performance of β-phase, the thermoelectric properties of hot-pressed n-type Fe0.98Co0.02Si2 and p-type Fe0.92Mn0.08Si2 mechanically alloyed with 4 mass% of (Si+C) powders at various Si/C molar ratios (Si/C = 0.5∼2) have been investigated. Both the n-type and p-type mechanically alloyed and hot-pressed samples are composed of mostly the β-phase with a dispersion of a small amount of metallic ε-phase particles. The amount of the ε-phase decreases with increasing Si/C ratio in samples containing 4 mass%(Si+C). The ε-phase disappears at Si/C = 1.5 for the n-type and 1.75 for p-type FeSi2. Many fine α-SiC particles around 20 nm form in the samples mechanically alloyed for 20 h and hot-pressed at 1173 K for 1 h. The thermoelectric power increases with increasing Si/C ratio due to the increase in the amount of the semiconducting β-phase by the reaction of the metallic ε-phase with some part of Si, which was added to form SiC. The thermoelectric power exhibits a maximum at Si/C = 1.5 in n-type FeSi2 containing 4 mass%(Si+C) and Si/C = 1.75 for p-type. Although the electrical resistivity is increased by the addition of (Si+C), the Si/C ratio dependence of the electrical resistivity is not drastic for both n-type and p-type FeSi2. The addition of (Si+C) markedly decreases the thermal conductivity of both n-type and p-type FeSi2 due to the dispersion of fine α-SiC particles. The maximum figure of merit values appear at Si/C = 1.5 in n-type FeSi2 samples containing 4 mass%(Si+C) and Si/C = 1.75 for p-type.
Journal
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- Materials Transactions, JIM
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Materials Transactions, JIM 41 (2), 287-292, 2000
The Japan Institute of Metals
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Details 詳細情報について
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- CRID
- 1390282679222498176
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- NII Article ID
- 130003422669
- 10005351384
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- NII Book ID
- AA10699969
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- COI
- 1:CAS:528:DC%2BD3cXit1yisbs%3D
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- ISSN
- 2432471X
- 09161821
- http://id.crossref.org/issn/09161821
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- NDL BIB ID
- 5286641
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed