Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

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  • Ishizaki Takahiro
    Department of Material Science and Engineering, School of Science and Engineering, Waseda University
  • Yata Daisuke
    Department of Material Science and Engineering, School of Science and Engineering, Waseda University
  • Fuwa Akio
    Department of Material Science and Engineering, School of Science and Engineering, Waseda University

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説明

Copper–tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at −0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0×10−3 M (= kmol m−3), [TeO2] = 4.0×10−4 M, and pH = 1.

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