Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control
-
- Ishizaki Takahiro
- Department of Material Science and Engineering, School of Science and Engineering, Waseda University
-
- Yata Daisuke
- Department of Material Science and Engineering, School of Science and Engineering, Waseda University
-
- Fuwa Akio
- Department of Material Science and Engineering, School of Science and Engineering, Waseda University
この論文をさがす
説明
Copper–tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at −0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0×10−3 M (= kmol m−3), [TeO2] = 4.0×10−4 M, and pH = 1.
収録刊行物
-
- MATERIALS TRANSACTIONS
-
MATERIALS TRANSACTIONS 44 (8), 1583-1587, 2003
公益社団法人 日本金属学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282679222747392
-
- NII論文ID
- 130004452223
- 10011914032
-
- NII書誌ID
- AA1151294X
-
- COI
- 1:CAS:528:DC%2BD3sXnsFyltbs%3D
-
- ISSN
- 13475320
- 13459678
- http://id.crossref.org/issn/09161821
-
- NDL書誌ID
- 6652591
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可