Silicon Carbide Film Growth Using Dual Isotopical 28Si- and 12C+ Ion Species
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- Tsubouchi Nobuteru
- Osaka National Research Institute
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- Chayahara Akiyoshi
- Osaka National Research Institute
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- Kinomura Atsushi
- Osaka National Research Institute
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- Heck Claire
- Osaka National Research Institute
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- Horino Yuji
- Osaka National Research Institute
書誌事項
- タイトル別名
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- Silicon Carbide Film Growth Using Dual Isotopical <SUP>28</SUP>Si<SUP>−</SUP> and <SUP>12</SUP>C<SUP>+</SUP> Ion Species
- Silicon Carbide Film Growth Using Dual Isotopical <SUP>28</SUP>Si<SUP>−</SUP> and <SUP>12</SUP>C<SUP>+</SUP> Ion Species
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Silicon carbide (SiC) films were prepared by simultaneous irradiation of energetic, isotopical mass-separated 28Si− and 12C+ ions. Kinetic energies of both ions were 200 eV and deposition temperatures were room temperature, 400 and 600°C. Investigations of the basic film properties such as film composition, impurity, structures, etc. have been undertaken using infrared absorption (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED) measurements. Growth temperatures of SiC polycrystalline films under irradiation of ions for film deposition were investigated through the above measurements.
収録刊行物
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- Materials Transactions, JIM
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Materials Transactions, JIM 41 (1), 34-36, 2000
社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679222966272
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- NII論文ID
- 130003557251
- 10005745301
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- NII書誌ID
- AA10699969
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- COI
- 1:CAS:528:DC%2BD3cXhvFSnu7o%3D
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- ISSN
- 2432471X
- 09161821
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- NDL書誌ID
- 4975191
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可