Residual Stress of TiNi Shape Memory Alloy Thin Films with (111) Single-crystal Silicon Wafer
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- Wu Tingbin
- Open Lab of Education Ministry for High-Temperature Materials and Testing,Shanghai Jiao Tong University
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- Jiang Bohong
- Open Lab of Education Ministry for High-Temperature Materials and Testing,Shanghai Jiao Tong University
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- Qi Xuan
- Open Lab of Education Ministry for High-Temperature Materials and Testing,Shanghai Jiao Tong University
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- Liu Yushu
- Open Lab of Education Ministry for High-Temperature Materials and Testing,Shanghai Jiao Tong University
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- Xu Dong
- Key Lab of Education Ministry for Micro-Processing and Technique, Shanghai Jiao Tong University
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- Wang Li
- Key Lab of Education Ministry for Micro-Processing and Technique, Shanghai Jiao Tong University
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抄録
As micro-actuator materials, TiNi shape memory alloy thin films with substrate are used more and more in MEMS field. The residual stress in Ti-rich TiNi thin films with silicon substrate prepared by the magnetron-sputtering technique is measured by both X-ray glancing and contour method. The influence of crystallization annealing temperature and film thickness on the residual stress is tested. It is shown that the tensile residual stress decreases from 106 to 37 MPa with increasing annealing temperature from 723 to 923 K. However, it increases again above 1023 K. While increasing the film thickness from 2.4 to 6.5 \\micron, the residual stress reduces from 323 to 80 MPa. A lot of beautiful sunflower-like structures in crystal grains are observed by OM and TEM. The origin of the residual stress and its affecting factors are discussed. The thermal stress during cooling after annealing is the main factor resulting in tensile stress and the formation of martensite phase will release a part of tensile stress.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 43 (3), 566-570, 2002
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679223636480
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- NII論文ID
- 130004451839
- 10012322005
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- NII書誌ID
- AA1151294X
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- COI
- 1:CAS:528:DC%2BD38XjsFGrsbw%3D
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 6111258
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可