Effects of Protium Introduction on Electrical and Optical Properties of Tin-Germanium Oxide Thin Films
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- Arita Makoto
- Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University
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- Konishi Hirofumi
- Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University
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- Masuda Masataka
- Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University
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- Hayashi Yasunori
- Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University
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説明
Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge≤1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge≥4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introduction.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 43 (11), 2670-2672, 2002
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679224909184
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- NII論文ID
- 130004451705
- 10012327706
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- NII書誌ID
- AA1151294X
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- COI
- 1:CAS:528:DC%2BD3sXjtFam
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 6366916
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可