Crystal Structures and Spin Injection Signals of Si/Mg/MgO/Co₂FeAl₀.₅Si₀.₅ Junctions

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  • Onodera Takashi
    Department of Materials Science, Graduate School of Engineering, Tohoku University
  • Yoshida Masahiro
    Department of Materials Science, Graduate School of Engineering, Tohoku University
  • Tezuka Nobuki
    Department of Materials Science, Graduate School of Engineering, Tohoku University
  • Matsuura Masashi
    Department of Materials Science, Graduate School of Engineering, Tohoku University
  • Sugimoto Satoshi
    Department of Materials Science, Graduate School of Engineering, Tohoku University
  • Saito Yoshiaki
    Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation

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  • Crystal Structures and Spin Injection Signals of Si/Mg/MgO/Co<sub>2</sub>FeAl<sub>0.5</sub>Si<sub>0.5</sub> Junctions

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We investigated the crystal structures and the spin injection signals of Si/Mg/MgO/Co2FeAl0.5Si0.5 (CFAS) junctions deposited by molecule beam epitaxy. The (001)-orientation and the structural ordering of CFAS thin films changed by heating deposition of CFAS and the insertion of Mg layer into Si/MgO interface. Spin injection signals observed at 10 K for the junctions by 3 terminals Hanle measurements. The maximum voltage change, ΔVMAX, was increased by heating deposition of CFAS and the insertion of Mg layer. It is supposed that the enhancement of spin polarization by the improvement of structural ordering of CFAS or coherent tunneling by (001)-oriented MgO barrier caused the increment of ΔVMAX.

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