Effects of Room Temperature Heavy-Ion Irradiation on Magnetic and Electrical Properties of a Single Crystalline Iron Thin Film
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- Kamada Yasuhiro
- NDE & Science Research Center, Faculty of Engineering, Iwate University
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- Watanabe Hideo
- Research Institute for Applied Mechanics, Kyushu University
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- Mitani Seiji
- National Institute for Materials Science
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- Echigoya Jun-ichi
- NDE & Science Research Center, Faculty of Engineering, Iwate University
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- Kikuchi Hiroaki
- NDE & Science Research Center, Faculty of Engineering, Iwate University
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- Kobayashi Satoru
- NDE & Science Research Center, Faculty of Engineering, Iwate University
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- Yoshida Naoaki
- Research Institute for Applied Mechanics, Kyushu University
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- Takanashi Koki
- Institute for Materials Science, Tohoku University
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説明
We investigated the magnetic and electrical properties of a heavy-ion irradiated single crystalline iron film. A high quality Fe (001) film on MgO (001) was fabricated using the molecular beam epitaxy technique. The iron film was treated by 3.2 MeV Ni ion irradiation at room temperature using a tandem accelerator. Although the residual electrical resistivity increased by 0.9×10−8 Ωm after ion irradiation, the M-H curves did not change significantly. These results indicate that the formation of small irradiation defects such as sub-nanometer size vacancy clusters has little influence on magnetocrystalline anisotropy and the magnetization process of iron.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 50 (9), 2134-2138, 2009
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679226070912
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- NII論文ID
- 10025155462
- 130004454324
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 10334129
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可
