Ordering of In and Ga in Epitaxially Grown In0.53Ga0.47AS Films on (001) InP Substrates
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- Shin Keesam
- Institute for Interdisciplinary Research, Tohoku University Dept. of Metallurgy and Materials Science, Changwon National University
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- Yoo Junghoon
- Dept. of Metallurgy and Materials Science, Changwon National University
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- Joo Sungwook
- Dept. of Metallurgy and Materials Science, Changwon National University
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- Mori Takahiro
- Institute for Interdisciplinary Research, Tohoku University Institute for Materials Research, Tohoku University
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- Shindo Daisuke
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Hanada Takashi
- Institute for Materials Research, Tohoku University
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- Makino Hisao
- Institute for Materials Research, Tohoku University
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- Cho Meoungwhan
- Institute for Materials Research, Tohoku University
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- Yao Takafumi
- Institute for Interdisciplinary Research, Tohoku University Institute for Materials Research, Tohoku University
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- Park Young-Gil
- Samsung SDI Co. Ltd.
書誌事項
- タイトル別名
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- Ordering of In and Ga in Epitaxially Grown In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As Films on (001) InP Substrates
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説明
Ordering of In and Ga in In0.53Ga0.47As films grown at 573 K, 673 K, and 773 K by molecular beam epitaxy was investigated by electron diffraction pattern analysis using a transmission electron microscope equipped with an Ω-filter and imaging plates. In addition, high-resolution electron microscopy on the specimens and fast Fourier transformation analyses were performed to identify the short-range ordering. In the EDPs obtained from the specimen grown at 573 K, the diffuse scattering corresponding to short-range ordering was observed only when the film was investigated at [\\bar110] beam incidence, whereas for the specimens grown at 673 and 773 K, diffuse scattering was observed only at [110] beam incidence. The ordering of 573 K specimen has a triple period and those of 673 K and 773 K have a double period. Through the processing of the HREM images and comparison of calculated and observed diffuse-scattering distribution, models of short-range ordered structures were proposed on the basis of the triple-A type ordering at the specimen grown at the 573 K and the CuPt-B type ordering at the specimen grown at 773 K.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 47 (4), 1115-1120, 2006
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679226997632
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- NII論文ID
- 130004453112
- 10017412719
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 7886941
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDLサーチ
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