Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature
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- Nitta Noriko
- Department of Mechanical Engineering, Kobe University
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- Hasegawa Tokiya
- Department of Mechanical Engineering, Kobe University
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- Yasuda Hidehiro
- Department of Mechanical Engineering, Kobe University
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- Hayashi Yoshihiko
- Research Reactor Institute, Kyoto University
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- Yoshiie Toshimasa
- Research Reactor Institute, Kyoto University
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- Taniwaki Masafumi
- School of Environmental Science and Technology, Kochi University of Technology
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Ge (001) surface was irradiated by 60 keV Sn ions to a fluence of 8×1018 ions/m2 at a controlled substrate temperature, and the formation of defects was investigated. A damaged layer of about 50 nm thickness was formed on the surface at 150 K. In the case of irradiation at room temperature, a damaged layer was also created, but voids of about 15 nm diameter were created near the top surface. This result is explained by the high mobility of vacancies during irradiation at room temperature, and it is confirmed that the void formation process is dominated by the migration of induced point defects.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 52 (2), 127-129, 2011
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679227275136
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- NII論文ID
- 10027837397
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 10958761
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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