Influence of Laser Plasma Soft X-Ray Irradiation on Crystallization of a-Si Film by Infrared Furnace Annealing

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  • Matsuo Naoto
    Department of Materials Science & Chemistry, University of Hyogo
  • Isoda Nobuya
    Department of Materials Science & Chemistry, University of Hyogo
  • Heya Akira
    Department of Materials Science & Chemistry, University of Hyogo
  • Amano Sho
    Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo
  • Miyamoto Shuji
    Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo
  • Mochizuki Takayasu
    Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo
  • Kawamoto Naoya
    Department of Electrical and Electronic Engineering, Yamaguchi University

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The influence of laser plasma soft X-ray (LPX) irradiation on crystallization of a-Si film by infrared (IR) furnace annealing is investigated. The crystallization temperature by LPX irradiation followed by IR annealing is lowered down to 420°C and the grain size increases up to 270 nm. This phenomenon is related with the change in characteristics of a-Si film which is generated by the bond distortion and relaxation during the LPX irradiation. It was found that the LPX-irradiated film is constituted by the two different layers and the refractive index of upper layer was lower than that of under layer. The dangling bond density of a-Si film was also decreased by LPX irradiation to a-Si film. From these results, the crystallization mechanism is discussed.

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