Electron Microscopy Studies of Non-Local Effects’ Impact on Cathodoluminescence of Semiconductor Laser Structures
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- Czerwinski A.
- Institute of Electron Technology
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- Pluska M.
- Institute of Electron Technology
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- Ratajczak J.
- Institute of Electron Technology
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- Szerling A.
- Institute of Electron Technology
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- Ktcki J.
- Institute of Electron Technology
書誌事項
- タイトル別名
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- Electron Microscopy Studies of Non-Local Effects’ Impact on Cathodoluminescence of Semiconductor Laser Structures
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Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence spectrum, map the optical activity and reveal defects in semiconductor structures. It is commonly recognized that the CL signal represents the local properties of the structure region excited by the electron beam. The present investigations show that if the structure under study contains regions with a strong electric field (e.g. p-n junction), the CL signal may much depend on phenomena far from the excitation region. The range of CL-results distortion extends from negligible changes to completely wrong output. It depends on various parameters described in the paper. The CL results obtained for AlGaAs/GaAs laser heterostructures with InGaAs quantum well are presented.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 52 (3), 364-369, 2011
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679227301248
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- NII論文ID
- 10027838274
- 130004454633
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 10990411
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可