Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy
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- Muto Shunsuke
- Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University
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- Enomoto Naruaki
- Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University
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説明
Internal structures of surface blisters and their precursors in Si formed by H+, D+ and He+ irradiation were examined by cross-sectional transmission electron microscopy (XTEM). The skin structures of H+-D+- and He+-blisters reflected the difference in the damage accumulation, and chemical interaction between the implant ion and silicon. These differences had a direct influence on the defect structures of the damaged layer, which played essential roles in the blistering mechanisms. It was found that blister skin thickness derived by grazing incidence electron microscopy (GIEM) and electron energy-loss spectroscopy (EELS) was underestimated compared to direct measurement by XTEM. The origin of this discrepancy is discussed.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 46 (10), 2117-2124, 2005
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679227617664
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- NII論文ID
- 130004452598
- 10018277373
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 7487665
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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