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- Sueyoshi Hidekazu
- Department of Nano Structure and Advanced Materials, Graduate School of Science and Engineering, Kagoshima University
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- Kakiuchi Shigeki
- Department of Nano Structure and Advanced Materials, Graduate School of Science and Engineering, Kagoshima University
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Thin Au film was prepared by sputtering and evaporation methods with a quartz substrate, followed by microwave irradiation in air (frequency of microwave: 2.45 GHz, incident flux of microwave: 563 W, irradiation time: 600 s). As a result, it was confirmed that microwave heating of thin Au film is feasible. The growth of crystalline and particles due to microwave heating was confirmed from AFM observation and XRD analysis.<BR>Thin Au film is continuously heated during microwave irradiation, regardless of a preparation method of thin film. Microwave heating depends on the amount of microwave absorption on a thin Au film, which is related to the thickness and microstructure of the thin Au film. The rate of temperature rise depends on the ratio of a thickness to resistivity of thin Au film.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 48 (3), 531-537, 2007
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679228060288
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- NII論文ID
- 130004453499
- 10018735071
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 8671159
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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