Effect of Argon Ion Irradiation on Ohmic Contact Formation on n-type Gallium Nitride
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- Kimura Kota
- Graduate School of Engineering, Osaka University
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- Maeda Masakatsu
- Joining and Welding Research Institute, Osaka University
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- Takahashi Yasuo
- Joining and Welding Research Institute, Osaka University
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This paper describes electrical properties at the interface between n-type GaN and Ti contact layers formed by RF magnetron sputter deposition under various time of Ar+ irradiation. The conductance increases proportionately to the extension of the Ar+ irradiation time, indicating that Ar+ irradiation enhances the formation of nitrogen vacancies and consequently Schottky barrier width is narrowed. On the other hand, extensive Ar+ irradiation for 3600 s and longer does not show further increase of conductance. Extensive selective sputtering of nitrogen atoms out of GaN has induced the phase transformation from GaN to Ga at the surface of GaN. The Ga phase enhances the formation of Ga–Ti compounds during the deposition of Ti, and it increases the height and width of the Schottky barrier.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 54 (6), 895-898, 2013
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679228521216
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- NII論文ID
- 10031176404
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- NII書誌ID
- AA1151294X
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- COI
- 1:CAS:528:DC%2BC3sXht1Wgu7zF
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 024524618
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可