Measurement of Seebeck Coefficient and Conductive Behaviors of Bi₂Te₃-xSe[x] (x = 0.15-0.6) Thermoelectric Semiconductors without Harmful Dopants

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  • Fusa Mei
    Interdisciplinary Graduate School of Science and Engineering, Shimane University
  • Yamamoto Naoaki
    Faculty of Materials Science, Shimane University
  • Hasezaki Kazuhiro
    Department of Energy System, Institute of Technology and Science, The University of Tokushima

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  • Measurement of Seebeck Coefficient and Conductive Behaviors of Bi<sub>2</sub>Te<sub>3−</sub><i><sub>x</sub></i>Se<i><sub>x</sub></i> (<i>x</i> = 0.15–0.6) Thermoelectric Semiconductors without Harmful Dopants
  • Measurement of Seebeck Coefficient and Conductive Behaviors of Bi<sub>2</sub>Te<sub>3&minus;</sub><i><sub>x</sub></i>Se<i><sub>x</sub></i> (<i>x</i> = 0.15&ndash;0.6) Thermoelectric Semiconductors without Harmful Dopants

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A system for measuring Seebeck coefficient was constructed and applied to Bi2Te3−xSex (x = 0.15–0.6) samples without harmful dopants, prepared by mechanical alloying (MA) followed by hot pressing (HP). The constructed thermal contact method system, using single and multiple ΔT values, gave Seebeck coefficients of a standard reference material (SRM 3451) at room temperature confirmable as −230 ± 4 and −232 ± 1 µV/K, respectively. X-ray diffraction patterns and differential scanning calorimetry curves showed that the MA–HP-sintered samples of Bi2Te3−xSex were single-phase Bi2(Te,Se)3-related materials. All the Bi2Te3−xSex samples were n-type semiconductors. The maximum power factor was 1.4 × 10−3 W m−1 K−2 for Bi2Te2.8Se0.2 sintered at 623 K. These results indicated that doping with harmful materials of Bi2Te3−xSex compounds prepared by the MA–HP process is not necessary for carrier control.

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