Angle-Resolved Photoemission Analysis of Electronic Structures for Thermoelectric Properties of Off-Stoichiometric Fe₂₋xV₁₊xAl Alloys

  • Soda Kazuo
    Department of Quantum Engineering, Graduate School of Engineering, Nagoya University Synchrotron Radiation Research Center, Nagoya University
  • Harada Shota
    Department of Quantum Engineering, Graduate School of Engineering, Nagoya University
  • Hayashi Toshimitsu
    Department of Quantum Engineering, Graduate School of Engineering, Nagoya University
  • Kato Masahiko
    Department of Quantum Engineering, Graduate School of Engineering, Nagoya University
  • Ishikawa Fumihiro
    Department of Physics, Faculty of Science, Niigata University
  • Yamada Yuh
    Department of Physics, Faculty of Science, Niigata University
  • Fujimori Shin-ichi
    Quantum Beam Science Center, Japan Atomic Energy Agency
  • Saitoh Yuji
    Quantum Beam Science Center, Japan Atomic Energy Agency

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タイトル別名
  • Angle-Resolved Photoemission Analysis of Electronic Structures for Thermoelectric Properties of Off-Stoichiometric Fe<sub>2–x</sub>V<sub>1+x</sub>Al Alloys

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The electronic states of Heusler (L21)-type off-stoichiometric Fe2–xV1+xAl alloys have been investigated by soft x-ray angle-resolved photoelectron spectroscopy (ARPES) to clarify the origin of the remarkable increase in thermoelectric power, which cannot be explained by the rigid-band model. In off-normal and normal ARPES, Fe2.05V0.95Al shows weakly dispersive bulk bands from the binding energy of 0.3 eV at the Γ point in the Γ–X and Γ–L directions, and an almost dispersionless one around 0.3 eV in the gap of dispersive bulk bands in the Γ–L direction, which is attributed to antisite Fe defects. At the Γ point, the bulk bands do not appear to cross the Fermi level EF, which is consistent with the rigid-band model for excess Fe content, but no band crossing EF is found at the X point. The antisite Fe defect states near EF might push up the band at the X point and cause p-type thermoelectric properties, which is unexpected for the rigid-band model. The change in electronic structures and thermoelectric properties for the off-stoichiometry and substitution by a forth element is discussed.

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