Complementary Metal-Oxide Semiconductor (CMOS) Image Sensor: An Insight as a Point-of-Care Label-Free Immunosensor

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  • KANDASAMY Karthikeyan
    College of Bionanotechnology, Kyungwon University
  • MARIMUTHU Mohana
    College of Bionanotechnology, Kyungwon University
  • SUNG Gun Yong
    BT Convergence Technology Research Department, Electronics and Telecommunications Research Institute (ETRI)
  • AHN Chang Geun
    BT Convergence Technology Research Department, Electronics and Telecommunications Research Institute (ETRI)
  • KIM Sanghyo
    College of Bionanotechnology, Kyungwon University

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Abstract

The present paper examines the efficiency of a complementary metal-oxide semiconductor (CMOS) using an indium nanoparticle (InNP) substrate for the high-sensitivity detection of antigen/antibody interactions at concentrations as low as 100 pg/ml under normal light. Metal NPs coated with antigen/antibody layers act as a dielectric layer on the conducting sphere, which enhances the number of photons hitting the sensor surface through a light-scattering effect. This photon number is proportional to the digital number observed with the CMOS sensor for detecting antigen/antibody interactions.

Journal

  • Analytical Sciences

    Analytical Sciences 26 (12), 1215-1217, 2010

    The Japan Society for Analytical Chemistry

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