Evaluation of a Negative 193nm DUV Resist for the 45nm Node: Lithography, Degradation Kinetics during Etch and Implant.
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- May Michael J.
- STMicroelectronics Crolles Laboratoire d'Ingénierie des Polyméres pour les Hautes Technologies (LIPHT)
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- Derrough Semir
- CEA/LETI
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- Bazin Arnaud
- STMicroelectronics Crolles
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- Mortini Bénédicte
- STMicroelectronics Crolles
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- Brochon Cyril
- Laboratoire d'Ingénierie des Polyméres pour les Hautes Technologies (LIPHT)
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- Hodziioannou Georges
- Laboratoire d'Ingénierie des Polyméres pour les Hautes Technologies (LIPHT)
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Abstract
A 193 nm negative tone resist has been studied in order to estimate its possible use for the 45 nm node. Therefore, its etch resistance versus a 193 nm positive tone model resist has been analysed and its resolution limit determined by 193 nm interferometric immersion lithography. More recently, due to the chemical composition of the negative tone resist, it has been of interest to use it for thin film implant and some preliminary results will be given.
Journal
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 20 (3), 345-352, 2007
The Society of Photopolymer Science and Technology(SPST)
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Keywords
Details 詳細情報について
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- CRID
- 1390282679300477440
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- NII Article ID
- 130004464554
- 40015602498
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- NII Book ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BD2sXot1Wnu7k%3D
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- ISSN
- 13496336
- 09149244
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- NDL BIB ID
- 8918795
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed
