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- Fukushima Yasuyuki
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Watanabe Takeo
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Ohnishi Ryuji
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Kinoshita Hiroo
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Shiotani Hideaki
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Suzuki Shouta
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Hayakawa Masamichi
- Toyo Gosei Kogyo Co., Ltd.
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- Endo Yusuke
- Toyo Gosei Kogyo Co., Ltd.
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- Yamanaka Tomotaka
- Toyo Gosei Kogyo Co., Ltd.
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- Yusaa Shinichi
- Graduate School of Engineering, University of Hyogo
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抄録
We developed and evaluated PAG bonded resist which is chemically amplified (CA) resist to reduce line edge roughness (LER) in extreme ultraviolet lithography (EUVL). Under electron beam (EB) exposure, it is compared that LER and resolution of photo acid generator (PAG) bonded resist and PAG blended resist which using same PAG and base polymer. It was found that LER and resolution of PAG bonded resist are better than that of PAG blended resist. LER of 3.5 nm in 75 nm L/S and resolution of 25 nm space were achieved. Under EUV exposure, sensitivity of 5.0 mJ/cm2 is achieved.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 20 (3), 419-422, 2007
フォトポリマー学会
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詳細情報 詳細情報について
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- CRID
- 1390282679300484224
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- NII論文ID
- 130004464563
- 40015602507
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BD2sXot1Wmsrg%3D
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 8918894
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可