Characterization of Negative-Tone Molecular Resist for EUV and EB Lithography
-
- Kojima Kyoko
- Central Research Laboratory, Hitachi, Ltd.
-
- Mori Shigeki
- Hitachi ULSI Sys. Co. Ltd.
-
- Shiono Daiju
- Tokyo Ohka Kogyo Co., Ltd.
-
- Hada Hideo
- Tokyo Ohka Kogyo Co., Ltd.
-
- Onodera Junichi
- Tokyo Ohka Kogyo Co., Ltd.
この論文をさがす
抄録
In order to enable design of a negative-tone polyphenol resist using polarity-change reaction, five resist compounds (3M6C-MBSA-BLs) with different number of a functional group of γ-hydroxycarboxyl acid were prepared and evaluated by EB lithography. The resist using a mono-protected compound (3M6C-MBSA-BL1a) showed 40-nm hp resolution at an improved dose of 52 μC/cm2 probably due to removal of a non-protected polyphenol while the sensitivity of the resist using a compound of protected ratio of 1.1 on average with distribution of different protected ratio was 72 μC/cm2. A di-protected polyphenol was synthesized by a new synthetic route of 3-steps reaction, which is well-suited for mass production of the molecular resist compounds. The resist using di-protected compound (3M6C-MBSA-BL2b) showed 40-nm hp resolution at a dose of 40 μC/cm2, which was faster than that of mono-protected resist. Fundamental EUV lithographic evaluation of the resist using 3M6C-MBSA-BL2b by an EUV open frame exposure tool (EUVES-7000) gave its estimated optimum sensitivity of 7 mJ/cm2 and a proof of fine development behavior without any swelling.
収録刊行物
-
- Journal of Photopolymer Science and Technology
-
Journal of Photopolymer Science and Technology 20 (3), 429-436, 2007
フォトポリマー学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282679300505088
-
- NII論文ID
- 130004464565
- 40015602509
-
- NII書誌ID
- AA11576862
-
- COI
- 1:CAS:528:DC%2BD2sXot1WmsrY%3D
-
- ISSN
- 13496336
- 09149244
-
- NDL書誌ID
- 8918903
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可