Materials Choices for Sub-45nm Lithography: Immersion Characteristics of Silicon-Based Bilayer Resist
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- Malik Sanjay
- Fujifilm Electronic Materials U.S.A., Inc.
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- Brozozowy David
- Fujifilm Electronic Materials U.S.A., Inc.
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- Sarubbi Tom
- Fujifilm Electronic Materials U.S.A., Inc.
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Fundamental immersion characteristics such as surface properties and leaching are reported for silicon-based materials. Incorporation of as little as 8% of silicon significantly increases film contact angle compared to single layer materials. Silicon-based materials show sufficiently high film pull velocity compared to non-silicon-based films. A side-chain siloxane-based bilayer did not show any detectable silicon-leaching. The resist meets the ASML specification of PAG leaching rates being below 1.6E-12 mol/cm2-s. No silicon-outgassing was observed upon 193 nm exposure. A bilayer resist, TIS 193IL-PH (B50) demonstrated capability to resolve 65 nm dense line-space patterns with sufficient process latitudes and LER below 3 nm.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 20 (3), 457-463, 2007
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詳細情報 詳細情報について
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- CRID
- 1390282679300513024
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- NII論文ID
- 130004464569
- 40015602513
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BD2sXot1Wms7w%3D
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 8918953
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可