Optimization of 193 nm Contact Hole Resists for 100 nm Node.

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This paper discusses the 193nm lithography of contact holes with various pitches for 100nm node. We have studied 193nm contact hole resists in view of resist components, process conditions and optical settings. Sidewall roughness was improved by optimizing photoacid generators. Side lobes were eliminated by applying higher post exposure bake temperature or modification of polymers. The influence of optical settings, types of masks and mask bias was discussed with simulation and lithographic results and guidelines for better resolution and iso-dense bias were proposed. The optimized formulation, AZ® AXTM1O50P has a high resolution combined with a large depth of focus and an iso-dense overlap window (130nm (NA=0.63) DOF 0.38μm @ Exposure latitude 10%).

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