Development of Negative-type Photosensitive Semi-alicyclic Polyimide using a Photobase Generator
-
- Mizoguchi Katsuhisa
- Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology
-
- Shibasaki Yuji
- Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology
-
- Ueda Mitsuru
- Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology
この論文をさがす
抄録
A negative-type photosensitive polyimide (PSPI) based on a semi-alicyclic poly(amic acid) (PAA) and a photobase generator (PBG), {[(4,5-dimethoxy-2-nitrobenzyl)oxy]carbonyl}2,6-dimethyl piperidine (DNCDP) has been developed. PAA was readily prepared from cyclobutane-1,2,3,4-tetracarboxylic dianhydride (CBDA) and 4,4'-oxydianiline (ODA) in N,N-dimethylacetamide (DMAc) at room temperature, and used directly by the addition of the PBG for photo-lithography. The PSPI consisting of PAA (85 wt%) and PBG (15 wt%) showed the high sensitivity of 53 mJ/cm2 and contrast of 39.5, respectively, after exposed to 365 nm UV light (i-line) and developed with 0.238 wt% tetetramethylammonium hydroxide aqueous solution (TMAHaq) as a base-developer. A fine negative pattern with 6 μ features on a silicon wafer was obtained by a contact-printing mode and converted into a PI pattern by heating at 200 °C.
収録刊行物
-
- Journal of Photopolymer Science and Technology
-
Journal of Photopolymer Science and Technology 20 (2), 181-186, 2007
フォトポリマー学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282679300807936
-
- NII論文ID
- 130004464523
- 40015602472
-
- NII書誌ID
- AA11576862
-
- COI
- 1:CAS:528:DC%2BD2sXot1WntLo%3D
-
- ISSN
- 13496336
- 09149244
-
- NDL書誌ID
- 8918761
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可