Effect of Microwave Annealing on Oxide-Semiconductor-Precursor Ink
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- Cheong Hea Jeong
- Flexible Electronics Research center (FLEC), National Institute of Advanced Industrial Science and Technology
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- Fukuda Nobuko
- Flexible Electronics Research center (FLEC), National Institute of Advanced Industrial Science and Technology
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- Ogura Shintaro
- Flexible Electronics Research center (FLEC), National Institute of Advanced Industrial Science and Technology
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- Sakai Heisuke
- Flexible Electronics Research center (FLEC), National Institute of Advanced Industrial Science and Technology
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- Yoshida Manabu
- Flexible Electronics Research center (FLEC), National Institute of Advanced Industrial Science and Technology
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- Kodzasa Takehito
- Flexible Electronics Research center (FLEC), National Institute of Advanced Industrial Science and Technology
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- Tokuhisa Hideo
- Flexible Electronics Research center (FLEC), National Institute of Advanced Industrial Science and Technology
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- Tokoro Kazuhiko
- Flexible Electronics Research center (FLEC), National Institute of Advanced Industrial Science and Technology
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- Takeuchi Kazuhiko
- Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology
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- Nagahata Ritsuko
- Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology
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- Nakamura Takashi
- Research Center for Compact Chemical System (CCS), National Institute of Advanced Industrial Science and Technology
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- Uemura Sei
- Flexible Electronics Research center (FLEC), National Institute of Advanced Industrial Science and Technology
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抄録
We have demonstrated a high-efficiency microwave annealing technology that can enhance the electrical characteristics of TFTs prepared using high-viscosity IGZO precursors. The process is advantageous for short-time annealing high-viscosity precursor-film.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 27 (3), 339-342, 2014
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詳細情報 詳細情報について
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- CRID
- 1390282679301667072
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- NII論文ID
- 130004687587
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 025604232
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可