Development of Directed Self-Assembly Materials for Sub 10 nm Patterning
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- Komatsu Hiroyuki
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Hori Masafumi
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Minegishi Shinya
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Naruoka Takehiko
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Nagai Tomoki
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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抄録
Directed self-assembly (DSA) technique has been focused as the novel semi-conductor manufacturing process replacing photo-lithography process for semi-conductor applications. We synthesize block copolymers (BCP) containing silicon unit, which show cylinder and lamellae structure from micro-phase separation by only heat annealing (220 °C/ 60 sec). Moreover, we could get hexagonal cylinder, maybe lamella structure along the guide pattern for pattern division by grapho-epitaxy. The examined BCPs are expected to be promising materials for sub 10 nmhP patterning.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 27 (4), 425-429, 2014
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詳細情報 詳細情報について
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- CRID
- 1390282679301753728
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- NII論文ID
- 130004687604
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 025604047
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可