Leaching Phenomena and their Suppresion in l93 nm Immersion Lithography
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- Dammel Ralph R.
- AZ Electronic Materials USA Corp.
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- Pawlowski Georg
- AZ Electronic Materials USA Corp.
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- Romano Andrew
- AZ Electronic Materials USA Corp.
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- Hoolihan Frank M.
- AZ Electronic Materials USA Corp.
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- Kim Woo-Kyu
- AZ Electronic Materials USA Corp.
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- Sakmuri Raj
- AZ Electronic Materials USA Corp.
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- Abdallah David
- AZ Electronic Materials USA Corp.
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- Padmanaban Murirathna
- AZ Electronic Materials USA Corp.
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- Rahman M. Dalil
- AZ Electronic Materials USA Corp.
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- McKenzie Douglas
- AZ Electronic Materials USA Corp.
書誌事項
- タイトル別名
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- Leaching Phenomena and their Suppresion in 193 nm Immersion Lithography
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The leaching of ionic PAGs from model resist films into a static water volume is shown to follow first order kinetics. From the saturation concentration and the leaching time constant, the leaching rate at time zero is obtained which is a highly relevant parameter for evaluating lens contamination potential. The levels of leaching seen in the model resists generally exceed both static and rate-based dynamic leaching specifications. The dependence of leaching on anion structure shows that more hydrophobic anions have lower saturation concentration; however, the time constant of leaching increases with anion chain length. Thus in our model system, the initial leaching rates of nonaflate and PFOS anions are identical. Investigation of a water pre-rinse process unexpectedly showed that some PAG can still be leached from the surface although the pre-rinse times greatly exceeded the times required for saturation of the leaching phenomenon, which are expected to correspond to complete depletion of leachable PAG from the surface. A model is proposed to explain this phenomenon through re-organization of the surface as the surface energy changes during the air/water/air contact sequence of the pre-rinse process. The efficiency of developer-soluble top barrier layers in reducing leaching and their impact on lithography are described as well as the effect of PAG doping into the top layers.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 18 (5), 593-602, 2005
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詳細情報 詳細情報について
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- CRID
- 1390282679301905920
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- NII論文ID
- 130004833058
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BD2MXmtVOqtrg%3D
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 7338189
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可