Thermal Imprint of P3HT and PCPDTBT: Layer Preparation and Imprint Temperature

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  • Wang Si
    Department of Electrical, Information and Media Engineering, Microstructure Engineering, University of Wuppertal
  • Kawasaki Sebastian
    Macromolecular Chemistry Group (Buwmakro) and Institute for Polymer Technology, University of Wuppertal
  • Mayer Andre
    Department of Electrical, Information and Media Engineering, Microstructure Engineering, University of Wuppertal
  • Dhima Khalid
    Department of Electrical, Information and Media Engineering, Microstructure Engineering, University of Wuppertal
  • Steinberg Christian
    Department of Electrical, Information and Media Engineering, Microstructure Engineering, University of Wuppertal
  • Papenheim Mare
    Department of Electrical, Information and Media Engineering, Microstructure Engineering, University of Wuppertal
  • Sheer Hella-Christin
    Department of Electrical, Information and Media Engineering, Microstructure Engineering, University of Wuppertal

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Conventional imprint (dry-imprint) requires a low polymer viscosity by means of thermal annealing to enhance sufficient flow. Nevertheless, NIL patterning of semiconducting polymers like P3HT and PCPDTBT demands for no or low heating to avoid degradation. Therefore, we tried different layer preparation (no soft bake and low temperature soft bake) and low imprint temperatures in order to maintain the patterning fidelity but to reduce degradation of the imprint polymer. Different patterns were investigated: relatively large sizes (50/100 μm pads) and relatively small sizes (5 μm grating). We achieved similar cavity filling with wet-NIL (no soft bake) imprinted at 110 °C and dry-NIL imprinted at 200 °C for the small pattern size. In addition, we found that the PCPCDTBT has higher viscosity than Reg-P3HT. Admittedly, the large pattern size suffered from non-uniformity and limited reproducibility due to the higher η of the semi-crystalline polymer Reg-P3HT (compared with amorphous polymer Ran-P3HT).

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