Scanning Removal of Ion-implanted Novolak Resist by using a Laser Irradiation

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  • Kamimura Tomosumi
    Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology,
  • Kuroki Yuta
    Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology,
  • Kiriyama Takuya
    Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology,
  • Muraoka Hiroki
    Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology,
  • Nishiyama Takashi
    Department of Applied Chemistry and Bioengineering, Graduate School of Engineering, Osaka City University
  • Harada Toshiyuki
    Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology,
  • Kuramae Hiroyuki
    Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology,
  • Horibe Hideo
    Department of Applied Chemistry and Bioengineering, Graduate School of Engineering, Osaka City University

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Laser resist stripping for the ion-implanted novolak resist was successfully performed without occurring laser damage to the Si wafer. In order for the advanced　laser resist stripping method to be successful, it is important for the pulsed laser beam to pass though the ion-implanted resist and absorb into the Si wafer surface. The novolak resists which are implanted with B, P, and As ions, respectively, were irradiated with a pulsed 532nm laser. Regardless of the implanted ion species and density, more than 74 % of the laser power was found to absorb into the Si wafer surface. For the laser irradiation of 1 pulse, the ion-implanted resist with a density of 5.0 X 1013 atoms/cm2 was completely stripped in the same way as that of a non-implanted resist. The optical absorption of the resist surface increased as the density of the ion-implantation increased. In case of the ion-implanted resist with a density of 5.0 X 1015 atoms/cm2, the resist was stripped by 20 pulses irradiation without occurring laser-induced surface damage. A scanning removal of the highly ion-implanted resist was also successfully stripped by using an optimized irradiation condition. A highly ion-implanted resist was continuously stripped by the scanning laser irradiation with 20 pulses.

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