Metal Oxide Nanoparticle Photoresists for EUV Patterning

DOI Web Site Web Site 被引用文献16件 参考文献1件
  • Jiang Jing
    Department of Material Science and Engineering, Cornell University
  • Chakrabarty Souvik
    Department of Material Science and Engineering, Cornell University
  • Yu Mufei
    Department of Material Science and Engineering, Cornell University
  • Ober Christopher K.
    Department of Material Science and Engineering, Cornell University

この論文をさがす

抄録

Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have achieved high resolution (∼22 nm) at a very high EUV sensitivity (4.2 mJ/cm2). Further investigations into the patterning process suggests a ligand displacement mechanism, wherein, any combination of a metal oxide with the correct ligand could generate patterns in the presence of the suitable photoactive compound. The current investigation extends this study by developing new nanoparticle compositions with trans-dimethylacrylic acid and o-toluic acid ligands. This study describes their synthesis and patterning performance under 248 nm KrF laser (DUV) and also under 13.5 nm EUV exposures (dimethylacrylate nanoparticles) for the new resist compositions.

収録刊行物

被引用文献 (16)*注記

もっと見る

参考文献 (1)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ