Electron Penetration Depths in EUV Photoresists

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  • Torok Justin
    College of Nanoscale Science and Engineering, University at Albany
  • Srivats Bharath
    College of Nanoscale Science and Engineering, University at Albany
  • Memon Shahid
    College of Nanoscale Science and Engineering, University at Albany
  • Herbol Henry
    College of Nanoscale Science and Engineering, University at Albany
  • Schad Jonathan
    College of Nanoscale Science and Engineering, University at Albany
  • Das Sanjana
    College of Nanoscale Science and Engineering, University at Albany
  • Ocola Leonidas
    Argonne National Laboratories
  • Denbeaux Greg
    College of Nanoscale Science and Engineering, University at Albany
  • Brainard Robert L.
    College of Nanoscale Science and Engineering, University at Albany

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One of the obstacles hindering the transition from 193 nm to extreme ultraviolet (EUV) photolithography is photoresist performance. However, design of next generation chemically-amplified EUV resists necessitates that we fully understand the mechanisms underlying photoacid generation. In particular, we would like to determine the effective distance the low-energy electrons generated during EUV exposure travel within resists while continuing to induce photoacid generator (PAG) decomposition, since diffusion length carries important implications for resolution and line edge roughness. Here, we demonstrate two novel experimental approaches for obtaining electron diffusion length in resists using top-down electron beam exposure: thickness loss experiments and in situ mass spectrometry.

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