Progress Towards Production Worthy EUV Photoresists: Balancing Litho, Outgassing and OOB Performance
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- Cameron James
- Dow Electronic Materials
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- Thackeray James
- Dow Electronic Materials
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- Jain Vipul
- Dow Electronic Materials
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- LaBeaume Paul
- Dow Electronic Materials
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- Coley Suzanne
- Dow Electronic Materials
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- Ongayi Owendi
- Dow Electronic Materials
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- Wagner Mike
- Dow Electronic Materials
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- Biafore John
- KLA-Tencor Division
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Implementation of EUV Lithography (EUVL) for device high volume manufacturing (HVM) requires advanced photoresists capable of meeting the criteria of advanced logic and memory design rules. To achieve the level of performance required, resists must show excellent performance in terms of resolution, LWR (or CDU) and sensitivity. In addition, resists must meet the outgassing criteria required for HVM on the NXE toolset. Lastly, it is anticipated that resists with low OOB sensitivity will also be required. In this paper, we describe our progress in all of these areas. Based on our results, we believe we are on track to deliver production worthy resists for the EUVL era.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 27 (5), 667-675, 2014
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詳細情報 詳細情報について
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- CRID
- 1390282679302479360
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- NII論文ID
- 130004691100
- 40020133193
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 025604333
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 使用不可