Resist Surface Roughness Calculated using Theoretical Percolation Model.
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- Nakamura Jiro
- NTT Systemrt Electronics Laboratories
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- Deguchi Kimiyoshi
- NTT Systemrt Electronics Laboratories
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- Ban Hiroshi
- NTT Systemrt Electronics Laboratories
書誌事項
- タイトル別名
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- Resist Surface Roughness Calculated Usi
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説明
One of the most probable causes for the surface roughness on resist patterns is the locally ununiform distribution of photochemical events. This ununiformity arises because the photochemical events occur with a probability density as a function of illumination. This inevitable roughness is estimated by applying the percolation theory in the evaluation of the cross-linking reactions in negative resists. The calculation demonstrates that nanometer-scale roughness is formed at the surface of resist, and is larger in a chemically amplified resist than that in a conventional resist. The surface morphology of chemically amplified resists exposed to X-rays is also experimentally evaluated using atomic force microscopy.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 11 (4), 571-576, 1998
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詳細情報 詳細情報について
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- CRID
- 1390282679302597760
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- NII論文ID
- 130003488109
- 40005351837
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DyaK1cXkslGrsbg%3D
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- ISSN
- 13496336
- 09149244
- http://id.crossref.org/issn/09149244
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- NDL書誌ID
- 4525937
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可