Study of high photo-speed top surface imaging process using chemically amplified resist.
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- Mori Shigeyasu
- SHARP Corporation
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- Matsuzawa Nobuyuki
- Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292
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- Kaimoto Yuko
- Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292
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- Endo Masayuki
- Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292
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- Matsuo Takahiro
- Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292
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- Morisawa Taku
- Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292
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- Kuhara Koichi
- Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292
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- Sasago Masaru
- Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292
Bibliographic Information
- Other Title
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- Study of High Photo-speed Top Surface I
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Abstract
A positive high photo-speed top surface imaging (TSI) process for 193-nm lithography has been achieved by incorporation a chemically amplified resist consisting of photo-acid generator (PAG), cross-linker, and base polymer in the process. We found that we have to use both a chemically amplified resist with a PAG which generates acids having higher molecular weights, and a base polymer having a higher molecular weight. The photo-speed strongly depends on the post exposure bake (PEB) temperature. A required photo-speed of <5.0mJ/cm2 was obtained with PEB at 130°C under this process. We were unable to observe the trade-off between line edge roughness (LER) and photo-speed. The process achieves a resolution of 0.12μmL/S without the use of any resolution enhanced technique (RET), and 0.09μmL/S when an alternative phase shifting mask is used The process margin has a depth of focus of 0.5μm for 0.12μmL/S without RET and 0.7μm for 0.09 μmL/S with the alternative phase shifting mask. Sub-0.10-μm patterns were produced by using this TSI process for 193-nm lithography.
Journal
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 11 (4), 613-618, 1998
The Society of Photopolymer Science and Technology(SPST)
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Details 詳細情報について
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- CRID
- 1390282679302606976
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- NII Article ID
- 130003488115
- 40005351843
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- NII Book ID
- AA11576862
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- COI
- 1:CAS:528:DyaK1cXkslKjsLs%3D
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- ISSN
- 13496336
- 09149244
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- NDL BIB ID
- 4525943
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed