Dependence of the Deposition Rate on Probe-Substrate Separation in Nonadiabatic Near-Field Optical CVD

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  • Kawazoe Tadashi
    Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo
  • Ohtsu Motoichi
    Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo

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Abstract

Photochemical vapor deposition in the optical near field was employed to fabricate nanometric Zn dots on a sapphire substrate. A nonadiabatic photochemical process was used to excite molecular vibrational states in optically inactive zinc-bis(acetylacetonate) (Zn(acac)2) vapor. Dependence of the deposition rate on the separation distance, d, between the apex of the fiber probe and the substrate was investigated. At d > 5 nm, the dissociation rates of Zn(acac)2 decreased with increasing d due to the transition probability of ground-state Zn(acac)2 to excited vibrational states induced by the nonadiabatic photochemical process. At d < 5 nm, the deposition rate decreased with decreasing d, which was attributable to an insufficient supply of gaseous Zn(acac)2 molecules in the gap space between the fiber probe and the substrate.

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