Fabrication of sub-100nm Patterns using Near-field Mask Lithography with Ultra-thin Resist Process
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- Ito Toshiki
- Leading-Edge Fusion Research Center, Canon Inc.
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- Ogino Masaya
- Leading-Edge Fusion Research Center, Canon Inc.
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- Yamanaka Tomohiro
- Leading-Edge Fusion Research Center, Canon Inc.
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- Inao Yasuhisa
- Leading-Edge Fusion Research Center, Canon Inc.
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- Yamaguchi Takako
- Leading-Edge Fusion Research Center, Canon Inc.
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- Mizutani Natsuhiko
- Leading-Edge Fusion Research Center, Canon Inc.
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- Kuroda Ryo
- Leading-Edge Fusion Research Center, Canon Inc.
書誌事項
- 公開日
- 2005
- DOI
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- 10.2494/photopolymer.18.435
- 公開者
- フォトポリマー学会
この論文をさがす
説明
A resist pattern of half-pitch (hp) 50 nm, 120 nm deep was fabricated with near-field lithography (NFL) of i-line (&lamda; = 365 nm) using a positive-tone chemically amplified resist and a tri-layer resist process developed for NFL. The experimental results were in close agreement with the numerical results of electro-magnetic analysis using finite-difference time domain (FDTD) method. The possibility of fabricating sub-50 nm patterns was discussed over the numerical results.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 18 (3), 435-441, 2005
フォトポリマー学会
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詳細情報 詳細情報について
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- CRID
- 1390282679302843392
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- NII論文ID
- 130004833049
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BD2MXmtVCmtrw%3D
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 7338361
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
