Relationship between polishing pad surface temperature and removal rate in sapphire-chemical mechanical polishing
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- UNEDA Michio
- Kanazawa Institute of Technology
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- MATSUNAGA Takahiro
- Graduate School of Kanazawa Institute of Technology
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- TAKAHASHI Yoshihiro
- Graduate School of Kanazawa Institute of Technology
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- SHIBUYA Kazutaka
- Fujikoshi Machinery Corp.
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- NAKAMURA Yoshio
- Fujikoshi Machinery Corp.
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- ICHIKAWA Daizo
- Fujikoshi Machinery Corp.
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- ISHIKAWA Ken-ichi
- Kanazawa Institute of Technology
Bibliographic Information
- Other Title
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- サファイアCMPにおける研磨パッド表面温度と研磨レートの関係
- サファイア CMP ニ オケル ケンマ パッド ヒョウメン オンド ト ケンマ レート ノ カンケイ
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Description
This study was performed to investigate the relation between removal rate and polishing pad surface temperature in chemical mechanical polishing (CMP) of sapphire substrate (wafer). Contact image analysis was used to evaluate the polishing pad surface asperity. In particular, we examined the following two variables experimentally during sapphire-CMP: (i) the rotational speed of the wafer and the platen (polishing pad), and (ii) the setting temperature of the platen controlled by the chiller unit. This paper discusses the cross-relationships between polishing pad surface temperature, asperity, and removal rate. The results indicated that the hardness and asperity of the polishing pad were affected by changing the pad surface temperature. Furthermore, the removal rate increased with increasing number of contact points between the wafer and the polishing pad.
Journal
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- Journal of the Japan Society for Abrasive Technology
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Journal of the Japan Society for Abrasive Technology 60 (8), 448-453, 2016
The Japan Society for Abrasive Technology
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Details 詳細情報について
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- CRID
- 1390282679310213760
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- NII Article ID
- 130005284487
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- NII Book ID
- AN10192823
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- ISSN
- 18807534
- 09142703
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- NDL BIB ID
- 027588138
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed