Regularity of fragment pattern appearance in the Ga+ primary ion ToF-SIMS

TAKAHASHI Motoki, LI Zhanping, SEKIYA Miyako, HIROKAWA Kichinosuke

doi:10.2116/bunsekikagaku.53.503

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Ｇａ｀＋´一次イオン飛行時間型質量分析法における出現フラグメントパターンの規則性
Ga〔+〕一次イオン飛行時間型質量分析法における出現フラグメントパターンの規則性
Ga 1ジイオンヒコウジカンガタシツリョウブンセキホウニオケルシュツゲンフラグメントパターンノキソクセイ

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Abstract

The regularity of fragment pattern appearance from metals as well as inorganic and organic compound surfaces in the Ga⁺ primary ion ToF-SIMS is discussed. Fragment patterns from metal surfaces indicate the possibility that metals form alloys with Ga during Ga⁺ primary ion irradiation and particle emission. In the case of inorganic compounds, a rule concerning the chemical bond between surface atoms, as follows, can be proposed. For an inorganic compound formulated like M-A, where the valence of cation M is +n, that of anion A is −p. The chemical composition of the appearing ToF-SIMS fragment is M_xA_y; the rules nx ≥ (py + 1) for positive ion fragments and nx ≤ (py + 1) for negative ones are satisfied. Here, M has a higher value of electronegativity and A has a lower value. For the fragmentation of some organic compounds, the chemical composition of appearing fragments can be inferred by considering the bond-dissociation energies between atoms in radicals of sample molecules.<br>

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BUNSEKI KAGAKU

BUNSEKI KAGAKU 53 (6), 503-518, 2004

The Japan Society for Analytical Chemistry

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