Electronic and Chemical State Analysis of Oxide Heterointerfaces Using in situ Synchrotron Radiation Photoemission Spectroscopy

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  • KUMIGASHIRA Hiroshi
    Department of Applied Chemistry, The University of Tokyo Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency
  • OSHIMA Masaharu
    Department of Applied Chemistry, The University of Tokyo Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency

Bibliographic Information

Other Title
  • その場放射光光電子分光を用いる機能性酸化物界面の電子・化学状態解析
  • ソノバ ホウシャコウ コウデンシ ブンコウ オ モチイル キノウセイ サンカブツ カイメン ノ デンシ カガク ジョウタイ カイセキ

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Description

We constructed a high-resolution, high-throughput photoemission spectroscopy (PES) system combined with a combinatorial laser molecular-beam epitaxy thin-film growth system in order to realize in-situ characterization for electronic structures of transition-metal oxide (TMO) heterointerfaces. The elemental selectivity of the PES technique using synchrotron radiation enables us to extract the electronic structure of constituent layers in the vicinity of the heterointerface. Direct observation of the interfacial electronic structures is a key to understanding the physical and chemical properties of junctions based on TMO. The capabilities of the technique have been demonstrated by the in-situ resonant PES analysis of La0.6Sr0.4MnO3 layers buried in insulating perovskite oxides, such as La0.6Sr0.4FeO3 and SrTiO3 (STO).<br>

Journal

  • BUNSEKI KAGAKU

    BUNSEKI KAGAKU 56 (6), 409-418, 2007

    The Japan Society for Analytical Chemistry

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