High -Pressure Study of Deep Emission Band at GaInP/GaAs Interface.

DOI Web Site 参考文献11件 オープンアクセス
  • Kobayashi Toshihiko
    Department of Electrical and Electronics Engineering, Kobe University
  • Takashsma Kazuya
    Department of Electrical and Electronics Engineering, Kobe University
  • Uchida Kazuo
    Department of Communications and Systems, University of Electro-Communications

書誌事項

タイトル別名
  • High-Pressure Study of Deep Emission Ba
公開日
1998
DOI
  • 10.4131/jshpreview.7.715
公開者
日本高圧力学会

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説明

We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at 77 K and at pressures up to ∼5 GPa to investigate the characteristics of the 1. 46 eV deep emission band. It shows a very long decay time, and might be attributed to spatially indirect recombinations of electrons and holes at the ordered GaInP/GaAs interface. With increasing pressure, the PL peak shifts towards higher energies at a rate slightly smaller than that of the 1. 52 eV band from the GaAs well. The PL behavior observed at high pressures can be partly explained by the presence of repulsion between the Γ-folded energy states in ordered GaInP.

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