Amorphization from the Quenched High-Pressure Phase in III-V and II-VI Compounds.
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- Mori Y.
- Department of Physics, Keio University
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- Kato S.
- Department of Physics, Keio University
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- Mori H.
- Department of Physics, Keio University
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- Katayama Y.
- Department of Physics, Keio University
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- Tsuji K.
- Department of Physics, Keio University
Bibliographic Information
- Other Title
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- Amorphization from the Quenched High-Pressure Phase in 3-5 and 2-6 Compounds
- Amorphization from the Quenched High-Pr
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Abstract
The temperature dependences of phase transitions in GaSb, AlSb, GaAs, GaP, InAs, InP, ZnSe, and CdTe are studied by X-ray diffraction measurements under pressure up to 30 GPa at temperatures of 90-300 K. The phase transitions depend on paths in a pressure-temperature phase diagram. The structure of the recovered phase after decompression depends on the ionicity in bonding: amorphous for small ionicity, the stable zincblende structure for large ionicity, and microcrystalline for moderate ionicity. These results are discussed by using a configuration-coordinate model.
Journal
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- The Review of High Pressure Science and Technology
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The Review of High Pressure Science and Technology 7 353-355, 1998
The Japan Society of High Pressure Science and Technology
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Details 詳細情報について
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- CRID
- 1390282679358313472
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- NII Article ID
- 10002690121
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- NII Book ID
- AN10452913
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- ISSN
- 13481940
- 0917639X
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- NDL BIB ID
- 4493927
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed