Characterization of High Dose B<SUP>+</SUP> Implanted Ti Thin Films

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  • 高濃度ホウ素イオン注入チタン薄膜のキャラクタリゼーション
  • コウ ノウド ホウソ イオン チュウニュウ チタン ハクマク ノ キャラクタリ
  • Thin films-preparation, structure and properties. Characterization of high dose B+ implanted Ti thin films.

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Abstract

Boron ions were implanted in Ti films with a high dose of 7.14×1017 and 2.30×1018 ions/cm2. Depth profiles of the concentration of boron ions were measured by a second ary ion mass spectroscopy. Even at extremely high dose implantation of boron ions, the mean project range Rp coincided well with theoretical values predicted from LSS theory. At the dose of 2.30×1018 ions/cm2 the maximum boron ion concentration was higher than that of TiB3, synthesized by a solid reaction. The formation of very fine-grained TiB2 was confirmed by X-ray diffraction, and the reaction process is discussed. The temperature coefficient of electrical conductivity of B+ implanted 170 nm thick films was as low as 0.3 ppm/K in the temperature range from 4.2 to 350 K, so it was regarded as almos t constant. This fact may be correlated with the microstructure of the implanted films consisting of fine-grained TiB2 crystallites.

Journal

  • NIPPON KAGAKU KAISHI

    NIPPON KAGAKU KAISHI 1987 (11), 1896-1900, 1987-11-10

    The Chemical Society of Japan

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