Preparation and Electrical Properties of Rare Earth Sulfide Thin Films

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  • ADACHI Gin-ya
    Department of Applied Chemistry, Faculty of Engineering, Osaka University
  • MATSUBAYASHI Shigeharu
    Department of Applied Chemistry, Faculty of Engineering, Osaka University
  • IMANAKA Nobuhito
    Department of Applied Chemistry, Faculty of Engineering, Osaka University
  • WANG Hai Feng
    Department of Applied Chemistry, Faculty of Engineering, Osaka University
  • SHIOKAWA Jiro
    Department of Applied Chemistry, Faculty of Engineering, Osaka University

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Other Title
  • 希土類硫化物薄膜の作製とその電気的性質
  • キドルイ リュウカブツ ハクマク ノ サクセイ ト ソノ デンキテキ セイシツ

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Abstract

Thin films of rare earth sulfides were prepared for the purpose of obtaining materials with enhanced variation of the electrical conductivity against the sulfur pressure and also with faster response to the atmosphere. Cerium iaad erbium were employed as rare earth ele7meats. In the cerium sulfide thin film, the electrical conductivity (σ) decreased with increasing H2 content in H2S/H2 gas mixture (Fig.4). The relationship σ∝PS21/6 was obtained over the temperature range from 873 to 1073 K (Fig.6); this indicates the establishment of the following equilibrium reaction.<BR>1/2 S2⇔Ss + VCo'' + 2h·<BR>In the case of the erbium sulfide thin film, the conductivity depends only on the sulfur pressure at temperatures between 873 and 1173 K (Fig.7). The slope of log σ against log PS2 is close to 1/4, suggestive of the following equilibrium:<BR>1/2 S2⇔Ss + VEr' + h·

Journal

  • NIPPON KAGAKU KAISHI

    NIPPON KAGAKU KAISHI 1986 (3), 233-237, 1986-03-10

    The Chemical Society of Japan

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