Electric Resistivity of Indium(III) Oxide-Tin(IV) Oxide Films Prepared by Thermal Decomposition of Indium(III) Nitrate and Tin(IV) Nitrate

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Other Title
  • 硝酸インジウム(III)と硝酸スズ(IV)の熱分解法による酸化インジウム(III)-酸化スズ(IV)膜の作成とその電気抵抗
  • 硝酸インジウム（ＩＩＩ）と硝酸すず（ＩＶ）の熱分解法による酸化インジウム（ＩＩＩ）‐酸化すず（ＩＶ）膜の作成とその電気抵抗

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Description

Electrically conductive and transparent Sn-doped In2O3 films were prepared by the thermal indium(III) nitrate and tin(IV) nitrate. The mixture of acetylacetone solution of indium(III)nitrate, acetylacetone solution of tin and nitric acid, and acetone, was coated on a glass substrate, and dried at 55°C for twenty minutes. The film was heated in a electric furnace at the temperature range from 400 to 600°C. The coated solution decomposed vigorously at a temperature about 150°C, and indium oxide-tin oxide films were produced by heating above 400°C.<BR>The film formation process was examined by thermal analysis; infrared spectrometry, Xray diffractometry and electron micrograph. The effects of substrate materials, the amounts of tin (IV) oxide, heating temperatureS and heating time on the electric resistivity of prepared films were examined.<BR>The films prepared on the soda lime glass showed 'rather high' electric resistivity, but the fil ms on the quartz substrate or silicon oxide coated substrate showed low electric resistivity. It was confirmed that the relatively high resistivity of the former was due to the sodium ion which diffused into the films during the heating. An optimum dopant concentration of the film with the lowest resistivity was around 5 wt% tin(N) oxide in In2O3. The sheet resistance of the films was about 1.8 kΩ/sq at 40 nm thick and 0.4 kΩ/sq at 80 nm thick.

Journal

  • NIPPON KAGAKU KAISHI

    NIPPON KAGAKU KAISHI 1980 (9), 1345-1351, 1980-09-10

    The Chemical Society of Japan

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