Ｓ４５Ｃ／Ｓｉ３Ｎ４／Ｓ４５Ｃ接合体の残留応力と引張破断応力の関係

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タイトル別名
  • Relationship between Tensile Fracture Stress and Residual Stress in S45C/Si3N4/S45C Bonded Joints.
  • S45C Si3N4 S45C セツゴウタイ ノ ザンリュウ オウリョク ト

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Tensile tests of S45C/Si3N4/S45C bar-type specimens which were bonded in 1987 and 1988 by a metalizing method, were conducted at room temperature in laboratory air. Using broken specimens, the effect of bonding-induced residual stress on the tensile fracture stress was investigated in this study. The main results obtained were as follows. (1)When the length of Si3N4 was nearly equal to the diameter of the specimen, the analytical results based on a finite-element method showed the validity of measuring the residual stress near the interface of the unbroken side. (2)The residual stress near the interface which was measured by an X-ray diffraction method was tensile and increased monotonously toward the interface. (3)The residual stress distributions were influenced by the diameter of the specimen, the length of Si3N4 and the year of bonding. (4) The tensile fracture stress decreased with the increase of the interface residual stress which was extrapolated from the residual stress distribution, and a linear relationship was found between them.

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