High-sensitivity 1/4-Inch 250k pixel CCD Image Sensor

DOI
  • Furumiya M.
    ULSI Device Development Laboratories NEC Corporation
  • Morimoto M.
    ULSI Device Development Laboratories NEC Corporation
  • Hatano K.
    ULSI Device Development Laboratories NEC Corporation
  • Minami K.
    ULSI Device Development Laboratories NEC Corporation
  • Hokari Y.
    ULSI Device Development Laboratories NEC Corporation
  • Kawakami Y.
    Microelectronics Research Laboratories NEC Corporation
  • Nakano T.
    Microelectronics Research Laboratories NEC Corporation
  • Kawai S.
    Microelectronics Research Laboratories NEC Corporation
  • Murakami I.
    Microelectronics Research Laboratories NEC Corporation
  • Orihara K.
    Microelectronics Research Laboratories NEC Corporation
  • Mutoh N.
    Microelectronics Research Laboratories NEC Corporation
  • Suwazono S.
    Microelectronics Research Laboratories NEC Corporation
  • Teranishi N.
    Microelectronics Research Laboratories NEC Corporation
  • Kohono A.
    System-Micro Division NEC Corporation

Bibliographic Information

Other Title
  • 17-6 高感度1/4インチ25万画素CCD撮像素子

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Description

A high-sensitivity 1/4" 250k pixel Interline Transfer CCD (IT-CCD) image sensor has been developed. To achieve high-sensitivity, high-energy ion implantation process is adopted for photodiode (PD) formation. According to device simulation results, transfer gate (TG) and channel stop (CS) length are reduced to increase saturation signal. Sensitivity improvement of 35% are obtained, as well as 100mV saturation signal. Low smear level of -95dB is also achieved.

Journal

Details 詳細情報について

  • CRID
    1390282679428309120
  • NII Article ID
    110004778642
  • DOI
    10.11485/tvac.29.0_301
  • ISSN
    24330930
    09191879
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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