書誌事項
- タイトル別名
-
- Orientation Control and Properties of PZT Film Crystalized using Laser Annealing System
- レーザー カネツ ニ ヨル PZTマクハイコウセイ セイギョ ト マク ヒョウカ
この論文をさがす
抄録
<p>A recently developed PZT sol-gel deposition machine for minimal fab is employed to form a PZT film with various temperature ramping rates. The machine is equipped with a spin coating unit for a PZT sol-gel solution and laser heating unit which is newly applied to use as a rapid thermal annealing (RTA) for a device manufacturing process on a half-inch wafer. The thin film formation can be repeated for many times without terminating the process. The laser heating system can control the ramping rate of the heating in a wide range. In this work, we introduce for the first time detailed analyses of the PZT film annealed using laser heating method. Annealing with a high ramping rate of 60°C/sec in a crystallization process, a PZT (100) film is formed on the Si wafer. In contrast, with a low ramping rate of 1.7°C/sec, a PZT (111) film is formed. The PZT (100) and (111) films are analyzed using X-ray diffraction and Rutherford Backscattering Spectroscopy.</p>
収録刊行物
-
- 電気学会論文誌E(センサ・マイクロマシン部門誌)
-
電気学会論文誌E(センサ・マイクロマシン部門誌) 136 (12), 493-498, 2016
一般社団法人 電気学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282679436829184
-
- NII論文ID
- 130005171124
-
- NII書誌ID
- AN1052634X
-
- ISSN
- 13475525
- 13418939
-
- NDL書誌ID
- 027784758
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可