Orientation Control and Properties of PZT Film Crystalized using Laser Annealing System
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- Kazusa Junko
- Minimal fab.
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- Koga Kazuhiro
- Minimal fab.
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- Umeyama Norio
- Minimal fab.
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- Imura Fumito
- Minimal fab.
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- Noda Daiji
- MicroMachine Center・MicroNano Open Innovation Center
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- Khumpuang Sommawan
- AIST.
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- Hara Shiro
- AIST.
Bibliographic Information
- Other Title
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- レーザー加熱によるPZT膜配向性制御と膜評価
- レーザー カネツ ニ ヨル PZTマクハイコウセイ セイギョ ト マク ヒョウカ
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Abstract
<p>A recently developed PZT sol-gel deposition machine for minimal fab is employed to form a PZT film with various temperature ramping rates. The machine is equipped with a spin coating unit for a PZT sol-gel solution and laser heating unit which is newly applied to use as a rapid thermal annealing (RTA) for a device manufacturing process on a half-inch wafer. The thin film formation can be repeated for many times without terminating the process. The laser heating system can control the ramping rate of the heating in a wide range. In this work, we introduce for the first time detailed analyses of the PZT film annealed using laser heating method. Annealing with a high ramping rate of 60°C/sec in a crystallization process, a PZT (100) film is formed on the Si wafer. In contrast, with a low ramping rate of 1.7°C/sec, a PZT (111) film is formed. The PZT (100) and (111) films are analyzed using X-ray diffraction and Rutherford Backscattering Spectroscopy.</p>
Journal
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- IEEJ Transactions on Sensors and Micromachines
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IEEJ Transactions on Sensors and Micromachines 136 (12), 493-498, 2016
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679436829184
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- NII Article ID
- 130005171124
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- NII Book ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL BIB ID
- 027784758
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed