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- 中村 康一
- 京都大学 学際融合教育研究推進センター エジプト日本科学技術大学 材料工学専攻
書誌事項
- タイトル別名
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- Quantum Confinement and Piezoresistivity Simulation in 3C-SiC Nanosheet
- 3C-SiC ナノシート ニ オケル リョウシ トジコメ コウカ ト ピエゾ テイコウ トクセイ シミュレーション
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<p>The piezoresistivity in beta silicon carbide (3C-SiC) ultra-thin nanosheet with (001) surface orientation has been simulated on the basis of first-principles calculations of model structures. Electronic structure of the 3C-SiC nanosheet model with about 4 nm thickness has been completely verified in terms of the quantum confinement by the projection of the 3-dimensional multi-valley conduction band for bulk 3C-SiC onto the 2-dimensional reciprocal-lattice plane. For the ultra-thin 3C-SiC nanosheet models of less than 2 nm thickness, original features of themselves in electronic state can be observed beyond the quantum confinement concept. The strain response to carrier conductivity of n- or p-doped nanosheet models were calculated using band densities and their effective mass tensors with respect to carrier concentration and temperature. In the p-doped state, much larger longitudinal and transverse gauge factors for [110] direction were evaluated with the same qualitative character as p-type bulk 3C-SiC, on the condition that thickness is more than 2 nm under the quantum confinement effect.</p>
収録刊行物
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- 電気学会論文誌E(センサ・マイクロマシン部門誌)
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電気学会論文誌E(センサ・マイクロマシン部門誌) 136 (11), 465-472, 2016
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679437078656
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- NII論文ID
- 130005268278
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL書誌ID
- 027745867
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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