Electrical characterization of thin silicon films produced by metal-induced crystallization on insulating substrates by conductive AFM
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- Shamiryan Oxana
- Samsung Mobile Display Co. Ltd
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- Maidanchuk Ivan
- Samsung Mobile Display Co. Ltd
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- Ahn Nari
- Samsung Mobile Display Co. Ltd
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- Choi Ilsang
- Samsung Mobile Display Co. Ltd
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- Ho Kyoon Chung
- Samsung Mobile Display Co. Ltd
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We applied conductive Atomic Force Microscopy (c-AFM) to characterize the electrical properties of low-temperature polycrystalline silicon. Current distribution and current-voltage characteristics are recorded using conductive-diamond covered AFM tip and low noise external amplifier. Spectroscopic ellipsometry and optical microscopy are used to determine the grain size, crystalline fraction and film thickness. The correlation between structural properties of the poly-Si fabricated with varied conditions and c-AFM results is revealed, which shows the potential of this technique as convenient method for evaluation of metal-induced-crystallized poly-Si quality.
収録刊行物
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- Journal of Surface Analysis
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Journal of Surface Analysis 17 (3), 260-263, 2011
一般社団法人 表面分析研究会
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詳細情報 詳細情報について
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- CRID
- 1390282679448038784
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- NII論文ID
- 130005138952
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- NII書誌ID
- AA11448771
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- ISSN
- 13478400
- 13411756
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- NDL書誌ID
- 11077548
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可